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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFP250PBF Datasheet PDF
IRFP250PBF
$ 1.907
IRFP250PBF Datasheet PDF (9 Pages)
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IRFP250PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Power Dissipation
190W (Tc)
Drain to Source Voltage (Vds)
200 V
Input Capacitance (Ciss)
2800pF @25V(Vds)
Input Power (Max)
190 W
Power Dissipation (Max)
190W (Tc)

IRFP250PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFP250PBF Documents

Vishay Siliconix
9 Pages / 1.42 MByte
Vishay Siliconix
9 Pages / 1.42 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRFP250 Documents

IXYS Semiconductor
Trans MOSFET N-CH Si 200V 30A 3Pin(3+Tab) TO-247AD
ST Microelectronics
MOSFET N-CH 200V 33A TO-247
International Rectifier
N-Channel MOSFET, Vdss = 200V, Rds = 0.085Ω, Id = 30A, TO-247AC
VISHAY
Trans MOSFET N-CH 200V 30A 3Pin(3+Tab) TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 200V 30A 3Pin(3+Tab) TO-247AC
Fairchild
Trans MOSFET N-CH Si 200V 33A 3Pin(3+Tab) TO-247
Infineon
MOSFET N-CH 200V 33A TO-247
Samsung
N-channel power MOSFET, 200V, 30A
Harris
Power Field-Effect Transistor, 33A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Intersil
33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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