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IRFP260MPBF
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$ 0.563
IRFP260MPBF Datasheet PDF (8 Pages)
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IRFP260MPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
300 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.04 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
50A
Rise Time
60 ns
Input Capacitance (Ciss)
4057pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
48 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IRFP260MPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
16.13 mm
Size-Width
5.2 mm
Size-Height
21.1 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFP260MPBF Documents

Infineon
8 Pages / 0.62 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte

IRFP260 Documents

IXYS Semiconductor
Trans MOSFET N-CH 200V 46A 3Pin(3+Tab) TO-247AD
VISHAY
Trans MOSFET N-CH 200V 46A 3Pin(3+Tab) TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 200V 46A 3Pin(3+Tab) TO-247AC
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Vishay Siliconix
Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
Infineon
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Infineon
TO-247AC N-CH 200V 50A
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.04Ω; ID 50A; TO-247AC; PD 300W; VGS +/-20V
Infineon
TO-247AC N-CH 200V 50A
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