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Part Datasheet Search > MOSFETs > Infineon > IRFP3710PBF Datasheet PDF
IRFP3710PBF
$ 0.853
IRFP3710PBF Datasheet PDF (9 Pages)
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IRFP3710PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
180 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.025 Ω
Polarity
N-Channel
Power Dissipation
200 W
Threshold Voltage
4 V
Input Capacitance
3000pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
57A
Rise Time
59 ns
Input Capacitance (Ciss)
3000pF @25V(Vds)
Input Power (Max)
200 W
Fall Time
48 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200W (Tc)

IRFP3710PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.9 mm
Size-Width
5.3 mm
Size-Height
20.3 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFP3710PBF Documents

Infineon
9 Pages / 0.22 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.03 MByte
Infineon
1 Pages / 0.12 MByte

IRFP3710 Documents

Infineon
TO-247AC N-CH 100V 57A
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRF
Power MOSFET(Vdss=100V, Rds(on)=0.0.5W(1/2W), Id=57A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.025Ω; ID 57A; TO-247AC; PD 200W; VGS +/-20V
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