IRFP4668PBF Datasheet PDF - Infineon

●The IRFP4668PBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

● Enhanced body diode dV/dt and dI/dt capability

● Fully characterized capacitance and avalanche SOA

● Drain to source voltage (Vds) of 200V

● Gate to source voltage of ±30V

● On resistance Rds(on) of 8mohm at Vgs 10V

● Power dissipation Pd of 520W at 25°C

● Operating junction temperature range from -55°C to 175°C