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IRFP9140PBF
$ 1.918
IRFP9140PBF Datasheet PDF (11 Pages)
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IRFP9140PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-21.0 A
Case/Package
TO-247-3
Power Rating
180 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
200 mΩ
Polarity
P-Channel
Power Dissipation
180 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
-100 V
Continuous Drain Current (Ids)
-21.0 A
Rise Time
73 ns
Input Capacitance (Ciss)
1400pF @25V(Vds)
Input Power (Max)
180 W
Fall Time
57 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
180 W

IRFP9140PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.87 mm
Size-Width
5.31 mm
Size-Height
20.7 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)
Minimum Packing Quantity
500

IRFP9140PBF Documents

VISHAY
11 Pages / 1.47 MByte
VISHAY
9 Pages / 1.44 MByte

IRFP9140 Documents

Vishay Siliconix
MOSFET P-CH 100V 21A TO-247AC
Samsung
100V, P-channel power MOSFET
Vishay Semiconductor
Trans MOSFET P-CH 100V 21A 3Pin(3+Tab) TO-247AC
Intersil
19A, 100V, 0.2Ω, P-Channel Power MOSFET
VISHAY
MOSFET P-CH 100V 21A TO-247AC
Harris
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Vishay Intertechnology
Power Field-Effect Transistor, 21A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Infineon
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
Fairchild
19A, 100V, 0.2Ω, P-Channel Power MOSFET
International Rectifier
-100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package
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