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IRFPC50PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

High Voltage MOS

Case Package:

TO-247

Description:

MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.6Ω; ID 11A; TO-247AC; PD 180W; VGS +/-20V

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Documentation:

IRFPC50PBF Datasheet (3 Pages)

Package Outline Dimension on3 Page

IRFPC50PBF Datasheet PDF (3 Pages)

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IRFPC50PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

11.0 A

Case/Package

TO-247

Power Rating

180 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.6 Ω

Polarity

N-Channel

Power Dissipation

180 W

Threshold Voltage

4 V

Input Capacitance

2700pF @25V

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Continuous Drain Current (Ids)

11.0 A

Rise Time

37 ns

Input Capacitance (Ciss)

2700pF @25V(Vds)

Fall Time

36 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

180 W

View Datasheet >

IRFPC50PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

15.87 mm

Size-Width

5.31 mm

Size-Height

20.7 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

IRFPC50PBF Environmental

IRFPC50PBF Function Overview

IRFPC50PBF Documents

IRFPC50PBF Datasheet

Vishay Semiconductor

3 Pages / 0.79 MByte

IRFPC50PBF Other Datasheet PDF

Vishay Semiconductor

20 Pages / 2.6 MByte

IRFPC50PBF Notice File

Vishay Semiconductor

2 Pages / 0.2 MByte

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MOSFET N-CH 600V 11A TO-247AC

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VISHAY

TO-247AC N-CH 600V 11A

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Vishay Siliconix

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TO-247-3 N-CH 600V 11A 600mΩ

IRFPC50APBF Datasheet PDF

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MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.58Ω; ID 11A; TO-247AC; PD 180W; VGS +/-30V

IRFPC50PBF Datasheet PDF

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.6Ω; ID 11A; TO-247AC; PD 180W; VGS +/-20V

IRFPC50PBF Datasheet PDF

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