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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFPE50PBF Datasheet PDF
IRFPE50PBF
$ 2.48
IRFPE50PBF Datasheet PDF (9 Pages)
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IRFPE50PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
190W (Tc)
Drain to Source Voltage (Vds)
800 V
Input Capacitance (Ciss)
3100pF @25V(Vds)
Power Dissipation (Max)
190W (Tc)

IRFPE50PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFPE50PBF Documents

Vishay Siliconix
9 Pages / 1.57 MByte
Vishay Siliconix
9 Pages / 1.58 MByte

IRFPE50 Documents

International Rectifier
MOSFET N-CH 800V 7.8A TO-247AC
VISHAY
TO-247AC N-CH 800V 7.8A
Vishay Siliconix
MOSFET N-CH 800V 7.8A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 800V 7.8A 3Pin(3+Tab) TO-247AC
IRF
Power MOSFET(Vdss=800V, Rds(on)=1.2Ω, Id=7.8A)
International Semiconductor
VISHAY
TO-247-3 N-CH 800V 7.8A 1.2Ω
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.2Ω; ID 7.8A; TO-247AC; PD 190W; VGS +/-20
International Rectifier
800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Vishay Siliconix
Trans MOSFET N-CH 800V 7.8A 3Pin(3+Tab) TO-247AC
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