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IRFPE50PBF Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

TO-247-3

Description:

TO-247-3 N-CH 800V 7.8A 1.2Ω

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Documentation:

IRFPE50PBF Datasheet (11 Pages)

Package Outline Dimension on8 Page 9 Page 10 Page

Part Numbering System on1 Page

IRFPE50PBF Datasheet PDF (11 Pages)

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IRFPE50PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

800 V

Current Rating

7.80 A

Case/Package

TO-247-3

Power Rating

190 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

1.2 Ω

Polarity

N-Channel

Power Dissipation

190 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

800 V

Breakdown Voltage (Drain to Source)

800 V

Continuous Drain Current (Ids)

7.80 A

Rise Time

38 ns

Input Capacitance (Ciss)

3100pF @25V(Vds)

Input Power (Max)

190 W

Fall Time

39 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

190 W

View Datasheet >

IRFPE50PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

15.87 mm

Size-Width

5.31 mm

Size-Height

20.7 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

500

View Datasheet >

IRFPE50PBF Environmental

IRFPE50PBF Function Overview

IRFPE50PBF Documents

IRFPE50PBF Datasheet

VISHAY

11 Pages / 1.6 MByte

IRFPE50PBF Other Datasheet PDF

VISHAY

19 Pages / 0.34 MByte

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VISHAY

TO-247AC N-CH 800V 7.8A

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Vishay Siliconix

MOSFET N-CH 800V 7.8A TO-247AC

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Vishay Semiconductor

Trans MOSFET N-CH 800V 7.8A 3Pin(3+Tab) TO-247AC

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IRF

Power MOSFET(Vdss=800V, Rds(on)=1.2Ω, Id=7.8A)

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International Semiconductor

IRFPE50PBF Datasheet PDF

VISHAY

TO-247-3 N-CH 800V 7.8A 1.2Ω

IRFPE50PBF Datasheet PDF

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.2Ω; ID 7.8A; TO-247AC; PD 190W; VGS +/-20

IRFPE50PBF Datasheet PDF

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Trans MOSFET N-CH 800V 7.8A 3Pin(3+Tab) TO-247AC

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