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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFPS37N50APBF Datasheet PDF
IRFPS37N50APBF
$ 4.084
IRFPS37N50APBF Datasheet PDF (9 Pages)
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IRFPS37N50APBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
SUPER-247
Power Dissipation
446000 mW
Rise Time
98 ns
Input Capacitance (Ciss)
5579pF @25V(Vds)
Fall Time
80 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
446W (Tc)

IRFPS37N50APBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFPS37N50APBF Documents

Vishay Siliconix
9 Pages / 0.17 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRFPS37N50 Documents

IRF
Power MOSFET(Vdss=500V, Rds(on)max=0.13Ω, Id=36A)
VISHAY
Single N-Channel 500V 0.13Ω Through Hole Power Mosfet - SUPER-247
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 400V; RDS(ON) 0.2Ω; ID 23A; TO-247AC; PD 280W; VGS +/-20V
Vishay Siliconix
MOSFET N-CH 500V 36A SUPER247
International Rectifier
TO-247
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packagey
Vishay Siliconix
MOSFET N-CH 500V 36A SUPER247
VISHAY
Super-247 N-CH 500V 36A
Vishay Semiconductor
Trans MOSFET N-CH 500V 36A 3Pin Super-247
Vishay Intertechnology
Power Field-Effect Transistor, 36A I(D), 500V, 0.13Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPER-247, 3Pin
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