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IRFPS40N50L
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IRFPS40N50L Datasheet PDF (10 Pages)
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IRFPS40N50L Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Number of Channels
1 Channel
Power Dissipation
540W (Tc)
Drain to Source Voltage (Vds)
500 V
Input Capacitance (Ciss)
8110pF @25V(Vds)
Power Dissipation (Max)
540W (Tc)

IRFPS40N50L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Width
5.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFPS40N50L Documents

Vishay Siliconix
10 Pages / 0.18 MByte
Vishay Siliconix
9 Pages / 0.18 MByte

IRFPS40N50 Documents

VISHAY
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.087Ω; ID 46A; TO-274AA; PD 540W; VGS +/-30V
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.087Ω; ID 46A; TO-274AA; PD 540W; VGS +/-30V
International Rectifier
MOSFET N-CH 500V 46A SUPER247
Vishay Siliconix
MOSFET N-CH 500V 46A SUPER247
Vishay Siliconix
MOSFET N-CH 500V 46A SUPER247
Vishay Intertechnology
Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA, SUPER-247, 3 PIN
Vishay Semiconductor
Trans MOSFET N-CH 500V 46A 3Pin Super-247
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.087Ω; ID 46A; TO-274AA; PD 540W; VGS +/-30V
IRF
Power MOSFET(Vdss=500V, Rds(on)typ.=0.087Ω, Id=46A)
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