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IRFPS40N50LPBF
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IRFPS40N50LPBF Datasheet PDF (3 Pages)
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IRFPS40N50LPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
SUPER-247
Drain to Source Resistance (on) (Rds)
0.1 Ω
Power Dissipation
540 W
Input Capacitance
8110pF @25V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRFPS40N50LPBF Size & Package

TYPE
DESCRIPTION
Size-Length
16.1 mm
Operating Temperature
-55℃ ~ 150℃

IRFPS40N50LPBF Documents

Vishay Precision Group
3 Pages / 0.1 MByte

IRFPS40N50 Documents

VISHAY
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.087Ω; ID 46A; TO-274AA; PD 540W; VGS +/-30V
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.087Ω; ID 46A; TO-274AA; PD 540W; VGS +/-30V
International Rectifier
MOSFET N-CH 500V 46A SUPER247
Vishay Siliconix
MOSFET N-CH 500V 46A SUPER247
Vishay Siliconix
MOSFET N-CH 500V 46A SUPER247
Vishay Intertechnology
Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA, SUPER-247, 3 PIN
Vishay Semiconductor
Trans MOSFET N-CH 500V 46A 3Pin Super-247
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.087Ω; ID 46A; TO-274AA; PD 540W; VGS +/-30V
IRF
Power MOSFET(Vdss=500V, Rds(on)typ.=0.087Ω, Id=46A)
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