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IRFR024NTRPBF
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IRFR024NTRPBF Datasheet PDF (11 Pages)
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IRFR024NTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
38 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.075 Ω
Polarity
N-Channel
Power Dissipation
45 W
Threshold Voltage
4 V
Input Capacitance
370pF @25V
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Continuous Drain Current (Ids)
17A
Rise Time
34 ns
Input Capacitance (Ciss)
370pF @25V(Vds)
Input Power (Max)
45 W
Fall Time
27 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
45W (Tc)

IRFR024NTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFR024NTRPBF Documents

Infineon
11 Pages / 0.39 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.13 MByte

IRFR024 Documents

VISHAY
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
Vishay Siliconix
MOSFET N-CH 60V 14A DPAK
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
Samsung
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Infineon
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Kersemi Electronic
Power MOSFET
Fairchild
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Infineon
DPAK N-CH 55V 17A
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