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IRFR024NTRRPBF
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IRFR024NTRRPBF Datasheet PDF (11 Pages)
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IRFR024NTRRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-252-3
Polarity
N-CH
Power Dissipation
45W (Tc)
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
17A
Input Capacitance (Ciss)
370pF @25V(Vds)
Power Dissipation (Max)
45W (Tc)

IRFR024NTRRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs

IRFR024NTRRPBF Documents

Infineon
11 Pages / 0.39 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRFR024 Documents

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Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Infineon
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Kersemi Electronic
Power MOSFET
Fairchild
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Infineon
DPAK N-CH 55V 17A
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