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Part Datasheet Search > MOSFETs > Infineon > IRFR120N Datasheet PDF
IRFR120N
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IRFR120N Datasheet PDF (11 Pages)
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IRFR120N Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
9.10 A
Case/Package
TO-252
Polarity
N-Channel
Power Dissipation
39.0 W
Part Family
IRFR120N
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100V (min)
Continuous Drain Current (Ids)
9.40 A
Rise Time
23 ns
Maximum Forward Voltage (Max)
1.3 V
Input Capacitance (Ciss)
330pF @25V(Vds)
Fall Time
23 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
48000 mW

IRFR120N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon

IRFR120N Documents

Infineon
11 Pages / 0.14 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRFR120 Documents

International Rectifier
MOSFET N-CH 100V 7.7A DPAK
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
Fairchild
Trans MOSFET N-CH Si 100V 8.4A 3Pin(2+Tab) DPAK
Intersil
8.4A, 100V, 0.27Ω, N-Channel Power MOSFETs
VISHAY
MOSFET N-CH 100V 7.7A DPAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Harris
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Infineon
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
Samsung
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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