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Part Datasheet Search > MOSFETs > Infineon > IRFR220NTRPBF Datasheet PDF
IRFR220NTRPBF
$ 0.126
IRFR220NTRPBF Datasheet PDF (11 Pages)
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IRFR220NTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
43 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.6 Ω
Polarity
N-CH
Power Dissipation
43 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
5A
Rise Time
11 ns
Input Capacitance (Ciss)
300pF @25V(Vds)
Input Power (Max)
43 W
Fall Time
12 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
43W (Tc)

IRFR220NTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFR220NTRPBF Documents

Infineon
11 Pages / 0.21 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
6 Pages / 0.15 MByte

IRFR220 Documents

International Rectifier
Mosfet n-Ch 200V 4.8A Dpak
Intersil
Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 200V 4....
VISHAY
MOSFET N-CH 200V 4.8A DPAK
Fairchild
Trans MOSFET N-CH Si 200V 4.6A 3Pin(2+Tab) TO-252AA
Philips
N-channel enhancement mode field effect transistor
Infineon
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
Samsung
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Vishay Siliconix
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Vishay Semiconductor
Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK
Harris
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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