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Part Datasheet Search > MOSFETs > VISHAY > IRFR220TRPBF Datasheet PDF
IRFR220TRPBF
$ 0.314
IRFR220TRPBF Datasheet PDF (8 Pages)
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IRFR220TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Drain to Source Resistance (on) (Rds)
800 mΩ
Polarity
N-Channel
Power Dissipation
2.5 W
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
4.80 A
Rise Time
22 ns
Input Capacitance (Ciss)
260pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
13 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
42 W

IRFR220TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2000

IRFR220TRPBF Documents

VISHAY
8 Pages / 1.39 MByte
VISHAY
11 Pages / 0.76 MByte

IRFR220 Documents

International Rectifier
Mosfet n-Ch 200V 4.8A Dpak
Intersil
Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 200V 4....
VISHAY
MOSFET N-CH 200V 4.8A DPAK
Fairchild
Trans MOSFET N-CH Si 200V 4.6A 3Pin(2+Tab) TO-252AA
Philips
N-channel enhancement mode field effect transistor
Infineon
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
Samsung
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Vishay Siliconix
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Vishay Semiconductor
Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK
Harris
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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