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Part Datasheet Search > MOSFETs > Infineon > IRFR4510TRPBF Datasheet PDF
IRFR4510TRPBF
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IRFR4510TRPBF Datasheet PDF (11 Pages)
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IRFR4510TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0111 Ω
Polarity
N-Channel
Power Dissipation
143 W
Threshold Voltage
3 V
Input Capacitance
3031 pF
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
63A
Rise Time
42 ns
Input Capacitance (Ciss)
3031pF @50V(Vds)
Fall Time
34 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
143W (Tc)

IRFR4510TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.73 mm
Size-Width
7.49 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFR4510TRPBF Documents

Infineon
11 Pages / 0.29 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
6 Pages / 0.11 MByte

IRFR4510 Documents

Infineon
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Infineon
DPAK N-CH 100V 63A
Infineon
DPAK N-CH 100V 63A
International Rectifier
DPAK/MOSFET, 100V, 63A, 13.9MOHM, 54NC QG
International Rectifier
Trans MOSFET N-CH 100V 63A 3Pin(2+Tab) DPAK T/R
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