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Part Datasheet Search > MOSFETs > Infineon > IRFR825PBF Datasheet PDF
IRFR825PBF
$ 0.249
IRFR825PBF Datasheet PDF (9 Pages)
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IRFR825PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
119 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.05 Ω
Polarity
N-Channel
Power Dissipation
119 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
6A
Rise Time
25 ns
Input Capacitance (Ciss)
1346pF @25V(Vds)
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
119W (Tc)

IRFR825PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFR825PBF Documents

Infineon
9 Pages / 0.2 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
33 Pages / 1.03 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
12 Pages / 0.56 MByte

IRFR825 Documents

Infineon
500V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Infineon
DPAK N-CH 500V 6A
Infineon
DPAK N-CH 500V 6A
International Rectifier
Trans MOSFET N-CH 500V 6A 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans MOSFET N-CH 500V 6A 3Pin(2+Tab) DPAK T/R
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