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Part Datasheet Search > Infineon > IRFR9024N Datasheet PDF
IRFR9024N
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IRFR9024N Datasheet PDF (11 Pages)
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IRFR9024N Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
DPAK-252
Polarity
P-CH
Power Dissipation
38 W
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
11A
Input Capacitance (Ciss)
350pF @25V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
38000 mW

IRFR9024N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Height
2.39 mm

IRFR9024N Documents

Infineon
11 Pages / 1.35 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
37 Pages / 2.01 MByte

IRFR9024 Documents

VISHAY
Trans MOSFET P-CH 60V 8.8A 3Pin(2+Tab) DPAK
Vishay Siliconix
MOSFET P-CH 60V 8.8A DPAK
International Rectifier
Mosfet p-Ch 60V 8.8A Dpak
Vishay Semiconductor
Trans MOSFET P-CH 60V 8.8A 3Pin(2+Tab) DPAK
Infineon
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Fairchild
P-Channel Enhancement Mode Field Effect Transistor
Samsung
P-CHANNEL POWER MOSFETS
Vishay Intertechnology
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, D-PAK-3
IRF
Power MOSFET(Vdss=-60V, Rds(on)=0.28Ω, Id=-8.8A)
Taitron
Power Field-Effect Transistor,
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