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IRFR9024NPBF
$ 0.464
IRFR9024NPBF Datasheet PDF (11 Pages)
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IRFR9024NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
38 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.175 Ω
Polarity
P-Channel
Power Dissipation
38 W
Threshold Voltage
4 V
Input Capacitance
350 pF
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
11A
Rise Time
55 ns
Reverse recovery time
47 ns
Maximum Forward Voltage (Max)
1.6 V
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
38 W
Fall Time
37 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature
-55℃ ~ 150℃
Power Dissipation (Max)
38W (Tc)

IRFR9024NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFR9024NPBF Documents

Infineon
11 Pages / 1.35 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
6 Pages / 0.15 MByte

IRFR9024 Documents

VISHAY
Trans MOSFET P-CH 60V 8.8A 3Pin(2+Tab) DPAK
Vishay Siliconix
MOSFET P-CH 60V 8.8A DPAK
International Rectifier
Mosfet p-Ch 60V 8.8A Dpak
Vishay Semiconductor
Trans MOSFET P-CH 60V 8.8A 3Pin(2+Tab) DPAK
Infineon
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Fairchild
P-Channel Enhancement Mode Field Effect Transistor
Samsung
P-CHANNEL POWER MOSFETS
Vishay Intertechnology
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, D-PAK-3
IRF
Power MOSFET(Vdss=-60V, Rds(on)=0.28Ω, Id=-8.8A)
Taitron
Power Field-Effect Transistor,
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