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IRFR9120NPBF
$ 0.074
IRFR9120NPBF Datasheet PDF (11 Pages)
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IRFR9120NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
39 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.48 Ω
Polarity
P-Channel
Power Dissipation
40 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
6.6A
Rise Time
47 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
40 W
Fall Time
31 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
40W (Tc)

IRFR9120NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not For New Designs
Packaging
Tube
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFR9120NPBF Documents

Infineon
11 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
6 Pages / 0.15 MByte

IRFR9120 Documents

VISHAY
Trans MOSFET P-CH 100V 5.6A 3Pin (2+Tab) DPAK
International Rectifier
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak packagem
Vishay Siliconix
MOSFET P-CH 100V 5.6A DPAK
Harris
MOSFET P-CH 100V 5.6A DPAK
Intersil
5.6A, 100V, 0.6Ω, P-Channel Power MOSFETs
Fairchild
Trans MOSFET P-CH 100V 5.6A 3Pin (2+Tab) TO-252AA
Vishay Intertechnology
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Samsung
Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Vishay Semiconductor
Trans MOSFET P-CH 100V 5.6A 3Pin(2+Tab) DPAK
Infineon
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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