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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFR9120PBF Datasheet PDF
IRFR9120PBF
$ 0.545
IRFR9120PBF Datasheet PDF (11 Pages)
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IRFR9120PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Dissipation
2.5W (Ta), 42W (Tc)
Drain to Source Voltage (Vds)
100 V
Input Capacitance (Ciss)
390pF @25V(Vds)
Power Dissipation (Max)
2.5W (Ta), 42W (Tc)

IRFR9120PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFR9120PBF Documents

Vishay Siliconix
11 Pages / 1.07 MByte
Vishay Siliconix
12 Pages / 1.07 MByte

IRFR9120 Documents

VISHAY
Trans MOSFET P-CH 100V 5.6A 3Pin (2+Tab) DPAK
International Rectifier
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak packagem
Vishay Siliconix
MOSFET P-CH 100V 5.6A DPAK
Harris
MOSFET P-CH 100V 5.6A DPAK
Intersil
5.6A, 100V, 0.6Ω, P-Channel Power MOSFETs
Fairchild
Trans MOSFET P-CH 100V 5.6A 3Pin (2+Tab) TO-252AA
Vishay Intertechnology
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Samsung
Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Vishay Semiconductor
Trans MOSFET P-CH 100V 5.6A 3Pin(2+Tab) DPAK
Infineon
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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