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Part Datasheet Search > MOSFETs > VISHAY > IRFR9310TRPBF Datasheet PDF
IRFR9310TRPBF
$ 0.642

IRFR9310TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Drain to Source Resistance (on) (Rds)
7 Ω
Polarity
P-Channel
Power Dissipation
50 W
Drain to Source Voltage (Vds)
400 V
Continuous Drain Current (Ids)
-1.80 A
Rise Time
10 ns
Input Capacitance (Ciss)
270pF @25V(Vds)
Input Power (Max)
50 W
Fall Time
24 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
50000 mW

IRFR9310TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2000

IRFR9310TRPBF Documents

VISHAY
11 Pages / 0.27 MByte
VISHAY
11 Pages / 0.23 MByte
VISHAY
3 Pages / 0.09 MByte

IRFR9310 Documents

International Rectifier
-400V Single P-Channel HEXFET Power MOSFET in a D-Pak packagem
VISHAY
DPAK P-CH 400V 1.8A
Vishay Siliconix
Trans MOSFET P-CH Si 400V 1.8A 3P DPAK
Vishay Semiconductor
Trans MOSFET P-CH Si 400V 1.8A 3Pin(2+Tab) DPAK
IRF
Power MOSFET(Vdss=-400V, Rds(on)=7Ω, Id=-1.8A)
VISHAY
TO-252-3P-CH 400V 1.8A 7Ω
VISHAY
TO-252-3P-CH 400V 1.8A 7Ω
VISHAY
TO-252-3P-CH 400V 1.8A 7Ω
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -400V; RDS(ON) 7Ω; ID -1.8A; TO-252AA; PD 50W; VGS +/-20V
Vishay Siliconix
MOSFET P-CH 400V 1.8A DPAK
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