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IRFRC20PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

High Voltage MOS

Case Package:

TO-252

Description:

VISHAY IRFRC20PBF Power MOSFET, N Channel, 2A, 600V, 4.4Ω, 10V, 4V

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Documentation:

IRFRC20PBF Datasheet (11 Pages)

Package Outline Dimension on8 Page 9 Page

Part Numbering System on1 Page

IRFRC20PBF Datasheet PDF (11 Pages)

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IRFRC20PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252

Power Rating

42 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

4.4 Ω

Polarity

N-Channel

Power Dissipation

42 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

2.00 A

Rise Time

23 ns

Input Capacitance (Ciss)

350pF @25V(Vds)

Fall Time

25 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2500 mW

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IRFRC20PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Height

2.39 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

IRFRC20PBF Environmental

IRFRC20PBF Function Overview

IRFRC20PBF Documents

IRFRC20PBF Datasheet

Vishay Semiconductor

11 Pages / 1.09 MByte

IRFRC20PBF Other Datasheet PDF

Vishay Semiconductor

11 Pages / 1.08 MByte

IRFRC20PBF Notice File

Vishay Semiconductor

3 Pages / 0.09 MByte

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