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IRFRC20PBF
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IRFRC20PBF Datasheet PDF (8 Pages)
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IRFRC20PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
42 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
4.4 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
2.00 A
Rise Time
23 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRFRC20PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFRC20PBF Documents

VISHAY
8 Pages / 1.81 MByte
VISHAY
11 Pages / 1.08 MByte
VISHAY
3 Pages / 0.09 MByte

IRFRC20 Documents

VISHAY
DPAK N-CH 600V 2A
International Rectifier
MOSFET N-CH 600V 2A DPAK
Vishay Siliconix
MOSFET N-CH 600V 2A DPAK
Vishay Intertechnology
Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
Vishay Semiconductor
MOSFET N-CH 600V 2A DPAK
Kersemi Electronic
Power MOSFET
VISHAY
DPAK N-CH 600V 2A
VISHAY
DPAK N-CH 600V 2A
VISHAY
TO-252-3 N-CH 600V 2A 4.4Ω
Vishay Semiconductor
VISHAY IRFRC20PBF Power MOSFET, N Channel, 2A, 600V, 4.4Ω, 10V, 4V
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