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Part Datasheet Search > MOSFETs > Infineon > IRFS4010PBF Datasheet PDF
IRFS4010PBF
$ 2.255
IRFS4010PBF Datasheet PDF (10 Pages)
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IRFS4010PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
375 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0039 Ω
Polarity
N-Channel
Power Dissipation
375 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
180A
Rise Time
86 ns
Input Capacitance (Ciss)
9575pF @50V(Vds)
Fall Time
77 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
375W (Tc)

IRFS4010PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Discontinued at Digi-Key
Packaging
Tube
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFS4010PBF Documents

Infineon
10 Pages / 0.28 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
12 Pages / 0.56 MByte

IRFS4010 Documents

Infineon
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Infineon
D2PAK N-CH 100V 180A
Infineon
D2PAK N-CH 100V 190A
Infineon
D2PAK N-CH 100V 180A
Infineon
D2PAK N-CH 100V 190A
International Rectifier
Trans MOSFET N-CH 100V 180A 3Pin(2+Tab) D2PAK Tube
Infineon
D2PAK N-CH 100V 180A
International Rectifier
MOSFET MOSFT 100V 180A 4.7mOhm 143NC Qg
International Rectifier
Trans MOSFET N-CH 100V 190A 7Pin(6+Tab) D2PAK Tube
International Rectifier
MOSFET MOSFT 100V 190A 4mOhm 150NC Qg
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