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Part Datasheet Search > MOSFETs > Vishay Semiconductor > IRFU110PBF Datasheet PDF
IRFU110PBF
$ 0.279
IRFU110PBF Datasheet PDF (8 Pages)
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IRFU110PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.54 Ω
Polarity
N-Channel
Power Dissipation
25 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
4.30 A
Rise Time
16 ns
Input Capacitance (Ciss)
180pF @25V(Vds)
Fall Time
9.4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
25000 mW

IRFU110PBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
6.73 mm
Size-Width
2.38 mm
Size-Height
6.22 mm
Operating Temperature
-55℃ ~ 150℃

IRFU110PBF Documents

Vishay Semiconductor
8 Pages / 1.3 MByte
Vishay Semiconductor
11 Pages / 0.73 MByte

IRFU110 Documents

VISHAY
MOSFET N-CH 100V 4.3A I-PAK
Intersil
4.7A, 100V, 0.54Ω, N-Channel Power MOSFETs
Vishay Siliconix
MOSFET N-CH 100V 4.3A I-PAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 4.3A 3Pin(3+Tab) IPAK
Harris
MOSFET N-CH 100V 4.3A I-PAK
VISHAY
TO-251-3 N-CH 100V 4.3A 540mΩ
Vishay Semiconductor
Trans MOSFET N-CH 100V 4.3A 3Pin(3+Tab) IPAK
Vishay Siliconix
TRANSISTOR 4.3A, 100V, 0.54Ω, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power
International Rectifier
MOSFET N-CH 100V 4.3A I-PAK
Fairchild
Trans MOSFET N-CH 100V 4.7A 3Pin(3+Tab) IPAK Rail
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