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Part Datasheet Search > MOSFETs > Vishay Semiconductor > IRFU120PBF Datasheet PDF
IRFU120PBF
$ 0.35
IRFU120PBF Datasheet PDF (12 Pages)
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IRFU120PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.27 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
7.70 A
Input Capacitance (Ciss)
360pF @25V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

IRFU120PBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
6.73 mm
Size-Width
2.39 mm
Size-Height
6.22 mm

IRFU120PBF Documents

Vishay Semiconductor
12 Pages / 0.79 MByte
Vishay Semiconductor
11 Pages / 0.78 MByte
Vishay Semiconductor
4 Pages / 0.23 MByte

IRFU120 Documents

International Rectifier
MOSFET N-CH 100V 7.7A I-PAK
Vishay Siliconix
MOSFET N-CH 100V 7.7A I-PAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(3+Tab) IPAK
Infineon
IPAK N-CH 100V 9.4A
Infineon
IPAK N-CH 55V 44A
VISHAY
TO-251-3 N-CH 100V 7.7A 270mΩ
International Rectifier
Trans MOSFET N-CH 100V 9.4A 3Pin(3+Tab) IPAK Tube
International Rectifier
Trans MOSFET N-CH Si 100V 9.4A 3Pin(3+Tab) IPAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(3+Tab) IPAK
International Rectifier
Trans MOSFET N-CH 55V 44A 3Pin(3+Tab) IPAK Tube
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