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Part Datasheet Search > MOSFETs > VISHAY > IRFU1N60APBF Datasheet PDF
IRFU1N60APBF
$ 1.049
IRFU1N60APBF Datasheet PDF (11 Pages)
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IRFU1N60APBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Drain to Source Resistance (on) (Rds)
7 Ω
Polarity
N-Channel
Power Dissipation
36 W
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
1.40 A
Rise Time
14 ns
Input Capacitance (Ciss)
229pF @25V(Vds)
Input Power (Max)
36 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
36W (Tc)

IRFU1N60APBF Size & Package

TYPE
DESCRIPTION
Size-Length
6.73 mm
Size-Width
2.39 mm
Size-Height
6.22 mm
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
3000

IRFU1N60APBF Documents

VISHAY
11 Pages / 0.24 MByte
VISHAY
11 Pages / 0.23 MByte
VISHAY
2 Pages / 0.04 MByte

IRFU1N60 Documents

VISHAY
TO-251-3 N-CH 600V 1.4A 7Ω
Vishay Semiconductor
VISHAY IRFU1N60APBF Power MOSFET, N Channel, 1.4A, 600V, 7Ω, 10V, 4V
Vishay Siliconix
IRFU1N60APBF N-channel MOSFET Transistor, 1.4A, 600V, 3Pin TO-251
VISHAY
IPAK N-CH 600V 1.4A
Vishay Siliconix
MOSFET N-CH 600V 1.4A I-PAK
International Rectifier
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Vishay Semiconductor
MOSFET N-CH 600V 1.4A I-PAK
Vishay Intertechnology
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