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IRFU220NPBF Datasheet PDF - International Rectifier

Manufacturer:

International Rectifier

Category:

MOSFETs

Case Package:

TO-251-3

Description:

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 600 Milliohms; ID 5A; I-Pak (TO-251AA); PD 43W

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

IRFU220NPBF Datasheet (11 Pages)

Package Outline Dimension on8 Page 9 Page

IRFU220NPBF Application Note (10 Pages)

IRFU220NPBF Datasheet PDF (11 Pages)

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IRFU220NPBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

200 V

Current Rating

5.00 A

Case/Package

TO-251-3

Drain to Source Resistance (on) (Rds)

600 mΩ

Polarity

N-Channel

Power Dissipation

43 W

Part Family

IRFU220N

Threshold Voltage

4 V

Input Capacitance

300pF @25V

Drain to Source Voltage (Vds)

200 V

Breakdown Voltage (Drain to Source)

200 V

Continuous Drain Current (Ids)

5.00 A

Rise Time

11.0 ns

Thermal Resistance

3.5℃/W (RθJC)

Input Capacitance (Ciss)

300pF @25V(Vds)

Input Power (Max)

43 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

View Datasheet >

IRFU220NPBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

6.73 mm

Size-Height

6.22 mm

Operating Temperature

-55℃ ~ 175℃

View Datasheet >

IRFU220NPBF Environmental

IRFU220NPBF Function Overview

IRFU220NPBF Documents

IRFU220NPBF Datasheet

International Rectifier

11 Pages / 0.21 MByte

IRFU220NPBF Other Datasheet PDF

International Rectifier

11 Pages / 0.77 MByte

IRFU220NPBF Application Note

International Rectifier

10 Pages / 0.13 MByte

IRFU220NPBF Product Catalog

International Rectifier

11 Pages / 1.82 MByte

IRFU220 Documents

IRFU220 Datasheet PDF

VISHAY

MOSFET N-CH 200V 4.8A I-PAK

IRFU220 Datasheet PDF

International Rectifier

Trans MOSFET N-CH 200V 4.8A 3Pin(3+Tab) IPAK

IRFU220 Datasheet PDF

Intersil

4.6A, 200V, 0.8Ω, N-Channel Power MOSFETs

IRFU220 Datasheet PDF

Harris

Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IRFU220 Datasheet PDF

Fairchild

4.6A, 200V, 0.8Ω, N-Channel Power MOSFETs

IRFU220 Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

IRFU220 Datasheet PDF

Vishay Siliconix

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

IRFU220 Datasheet PDF

Samsung

Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

IRFU220 Datasheet PDF

ON Semiconductor

Power MOSFET, N-Channel, B-FET, 200 V, 4.6 A, 0.9 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE

IRFU220 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 200V 4.8A 3Pin(3+Tab) IPAK

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