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Part Datasheet Search > MOSFETs > Infineon > IRFU220NPBF Datasheet PDF
IRFU220NPBF
$ 0.173
IRFU220NPBF Datasheet PDF (11 Pages)
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IRFU220NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Power Rating
43 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
600 mΩ
Polarity
N-Channel
Power Dissipation
43 W
Threshold Voltage
4 V
Input Capacitance
300 pF
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
5A
Rise Time
11 ns
Input Capacitance (Ciss)
300pF @25V(Vds)
Input Power (Max)
43 W
Fall Time
12 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
43W (Tc)

IRFU220NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.73 mm
Size-Width
2.38 mm
Size-Height
6.22 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFU220NPBF Documents

Infineon
11 Pages / 0.21 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.15 MByte

IRFU220 Documents

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Trans MOSFET N-CH 200V 4.8A 3Pin(3+Tab) IPAK
Intersil
4.6A, 200V, 0.8Ω, N-Channel Power MOSFETs
Harris
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Fairchild
4.6A, 200V, 0.8Ω, N-Channel Power MOSFETs
Vishay Intertechnology
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Vishay Siliconix
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
Samsung
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
ON Semiconductor
Power MOSFET, N-Channel, B-FET, 200 V, 4.6 A, 0.9 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE
Vishay Semiconductor
Trans MOSFET N-CH 200V 4.8A 3Pin(3+Tab) IPAK
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