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IRFU320PBF
$ 0.493
IRFU320PBF Datasheet PDF (12 Pages)
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IRFU320PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
400 V
Current Rating
3.10 A
Case/Package
TO-251-3
Power Rating
42 W
Drain to Source Resistance (on) (Rds)
1.8 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Drain to Source Voltage (Vds)
400 V
Breakdown Voltage (Drain to Source)
400 V
Continuous Drain Current (Ids)
3.10 A
Rise Time
14 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
13 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

IRFU320PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

IRFU320PBF Documents

VISHAY
12 Pages / 0.8 MByte
VISHAY
11 Pages / 0.78 MByte

IRFU320 Documents

Vishay Siliconix
MOSFET N-CH 400V 3.1A I-PAK
Intersil
3.1A, 400V, 1.8Ω, N-Channel Power MOSFETs
Harris
MOSFET N-CH 400V 3.1A I-PAK
International Rectifier
400V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Vishay Semiconductor
Trans MOSFET N-CH 400V 3.1A 3Pin(3+Tab) IPAK
VISHAY
MOSFET N-CH 400V 3.1A I-PAK
Fairchild
Trans MOSFET N-CH Si 400V 3.1A 3Pin(3+Tab) IPAK
Samsung
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Vishay Intertechnology
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
VISHAY
TO-251-3 N-CH 400V 3.1A 1.8Ω
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