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IRFU420PBF
$ 0.322
IRFU420PBF Datasheet PDF (11 Pages)
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IRFU420PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
2.40 A
Case/Package
TO-251
Power Rating
42 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
3 Ω
Polarity
N-Channel
Power Dissipation
42 W
Threshold Voltage
4 V
Input Capacitance
360pF @25V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
2.40 A
Rise Time
8.6 ns
Input Capacitance (Ciss)
360pF @25V(Vds)
Fall Time
16 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

IRFU420PBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
6.73 mm
Size-Width
2.39 mm
Size-Height
6.22 mm
Lead Length
9.65 mm
Operating Temperature
-55℃ ~ 150℃

IRFU420PBF Documents

Vishay Semiconductor
11 Pages / 1.77 MByte
Vishay Semiconductor
11 Pages / 1.04 MByte
Vishay Semiconductor
4 Pages / 0.23 MByte

IRFU420 Documents

VISHAY
MOSFET N-CH 500V 2.4A I-PAK
Vishay Siliconix
MOSFET N-CH 500V 2.4A I-PAK
Harris
MOSFET N-CH 500V 2.4A I-PAK
Intersil
2.5A, 500V, 3Ω, N-Channel Power MOSFETs
Vishay Semiconductor
Trans MOSFET N-CH 500V 2.4A 3Pin(3+Tab) IPAK
International Rectifier
MOSFET N-CH 500V 2.4A I-PAK
Fairchild
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
Vishay Intertechnology
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Samsung
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
VISHAY
TO-251-3 N-CH 500V 2.4A 3Ω
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