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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFU420PBF Datasheet PDF
IRFU420PBF
$ 0.638

IRFU420PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-251-3
Power Dissipation
2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss)
360pF @25V(Vds)
Power Dissipation (Max)
2.5W (Ta), 42W (Tc)

IRFU420PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFU420PBF Documents

Vishay Siliconix
4 Pages / 0.06 MByte
Vishay Siliconix
11 Pages / 1.04 MByte
Vishay Siliconix
2 Pages / 0.04 MByte

IRFU420 Documents

VISHAY
MOSFET N-CH 500V 2.4A I-PAK
Vishay Siliconix
MOSFET N-CH 500V 2.4A I-PAK
Harris
MOSFET N-CH 500V 2.4A I-PAK
Intersil
2.5A, 500V, 3Ω, N-Channel Power MOSFETs
Vishay Semiconductor
Trans MOSFET N-CH 500V 2.4A 3Pin(3+Tab) IPAK
International Rectifier
MOSFET N-CH 500V 2.4A I-PAK
Fairchild
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
Vishay Intertechnology
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Samsung
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
VISHAY
TO-251-3 N-CH 500V 2.4A 3Ω
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