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Part Datasheet Search > MOSFETs > Infineon > IRFU9024N Datasheet PDF
IRFU9024N
$ 0.603
IRFU9024N Datasheet PDF (11 Pages)
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IRFU9024N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
-60.0 V
Current Rating
-1.60 A
Case/Package
TO-251-3
Polarity
P-CH
Power Dissipation
38W (Tc)
Part Family
IRFU9024N
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
11.0 A
Rise Time
55.0 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Power Dissipation (Max)
38W (Tc)

IRFU9024N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFU9024N Documents

Infineon
11 Pages / 0.12 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
11 Pages / 1.31 MByte
Infineon
37 Pages / 2.01 MByte

IRFU9024 Documents

International Rectifier
MOSFET P-CH 60V 8.8A I-PAK
Vishay Siliconix
MOSFET P-CH 60V 8.8A I-PAK
VISHAY
IPAK P-CH 60V 8.8A
Vishay Semiconductor
Trans MOSFET P-CH 60V 8.8A 3Pin(3+Tab) IPAK
Samsung
P-CHANNEL POWER MOSFETS
Vishay Intertechnology
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, I-PAK-3
Infineon
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3
Infineon
IPAK P-CH 55V 11A
VISHAY
TO-251-3P-CH 60V 8.8A 280mΩ
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.175Ω; ID -11A; I-Pak (TO-251AA); PD 38W
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