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IRFZ14PBF
$ 0.679
IRFZ14PBF Datasheet PDF (9 Pages)
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IRFZ14PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
10.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.2 Ω
Polarity
N-Channel
Power Dissipation
43 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Continuous Drain Current (Ids)
10.0 A
Rise Time
50 ns
Input Capacitance (Ciss)
300pF @25V(Vds)
Input Power (Max)
43 W
Fall Time
19 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
43 W

IRFZ14PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)
Minimum Packing Quantity
50

IRFZ14PBF Documents

VISHAY
9 Pages / 1.61 MByte
VISHAY
9 Pages / 1.61 MByte
VISHAY
3 Pages / 0.14 MByte

IRFZ14 Documents

VISHAY
TO-220AB N-CH 60V 10A
International Rectifier
MOSFET N-CH 60V 10A TO-220AB
Vishay Siliconix
MOSFET N-CH 60V 10A TO-220AB
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.2Ω; ID 10A; TO-220AB; PD 43W; VGS +/-20V; -55
Samsung
Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
IRF
HEXFET Power MOSFET
VISHAY
TO-220-3 N-CH 60V 10A 200mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.2Ω; ID 10A; TO-220AB; PD 43W; VGS +/-20V; -55
Vishay Siliconix
MOSFET N-CH 60V 10A TO-220AB
VISHAY
TO-252-3 N-CH 60V 10A 200mΩ
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