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Part Datasheet Search > MOSFETs > International Rectifier > IRFZ24NSTRLPBF Datasheet PDF
IRFZ24NSTRLPBF
$ 1.055
IRFZ24NSTRLPBF Datasheet PDF (11 Pages)
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IRFZ24NSTRLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
0.07 Ω
Polarity
N-Channel
Power Dissipation
3.8 W
Part Family
IRFZ24NS
Threshold Voltage
4 V
Input Capacitance
370pF @25V
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
17.0 A
Input Capacitance (Ciss)
370pF @25V(Vds)
Input Power (Max)
3.8 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRFZ24NSTRLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.67 mm
Size-Height
4.703 mm
Operating Temperature
-55℃ ~ 175℃

IRFZ24NSTRLPBF Documents

International Rectifier
11 Pages / 0.65 MByte

IRFZ24 Documents

International Rectifier
Transistor NPN MOS IRFZ24 INTERNATIONAL RECTIFIER TO220
VISHAY
TO-220AB N-CH 60V 17A
Vishay Semiconductor
Trans MOSFET N-CH 60V 17A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 60V 17A TO-220AB
Fairchild
Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
NXP
17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Infineon
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
17A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
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