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Part Datasheet Search > MOSFETs > Vishay Semiconductor > IRFZ24PBF Datasheet PDF
IRFZ24PBF
$ 0.399
IRFZ24PBF Datasheet PDF (8 Pages)
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IRFZ24PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.1 Ω
Polarity
N-Channel
Power Dissipation
60 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
17.0 A
Rise Time
58 ns
Input Capacitance (Ciss)
640pF @25V(Vds)
Fall Time
42 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
60 W

IRFZ24PBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
15.49 mm
Operating Temperature
-55℃ ~ 175℃

IRFZ24PBF Documents

Vishay Semiconductor
8 Pages / 0.33 MByte
Vishay Semiconductor
8 Pages / 0.33 MByte

IRFZ24 Documents

International Rectifier
Transistor NPN MOS IRFZ24 INTERNATIONAL RECTIFIER TO220
VISHAY
TO-220AB N-CH 60V 17A
Vishay Semiconductor
Trans MOSFET N-CH 60V 17A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 60V 17A TO-220AB
Fairchild
Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
NXP
17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Infineon
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
17A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
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