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Part Datasheet Search > International Rectifier > IRFZ24VSPBF Datasheet PDF
IRFZ24VSPBF
$ 1.627
IRFZ24VSPBF Datasheet PDF (10 Pages)
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IRFZ24VSPBF Specifications

TYPE
DESCRIPTION
Case/Package
TO-263
Power Rating
44 W
Drain to Source Voltage (Vds)
60 V
Input Capacitance (Ciss)
590pF @25V(Vds)
Input Power (Max)
44 W

IRFZ24VSPBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube

IRFZ24VSPBF Documents

International Rectifier
10 Pages / 0.24 MByte
International Rectifier
11 Pages / 0.26 MByte

IRFZ24 Documents

International Rectifier
Transistor NPN MOS IRFZ24 INTERNATIONAL RECTIFIER TO220
VISHAY
TO-220AB N-CH 60V 17A
Vishay Semiconductor
Trans MOSFET N-CH 60V 17A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 60V 17A TO-220AB
Fairchild
Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
NXP
17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Infineon
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
17A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
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