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IRFZ34EPBF
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IRFZ34EPBF Datasheet PDF (9 Pages)
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IRFZ34EPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
28.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.042 Ω
Polarity
N-Channel
Power Dissipation
68 W
Part Family
IRFZ34E
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Continuous Drain Current (Ids)
28.0 A
Rise Time
30.0 ns
Input Capacitance (Ciss)
680pF @25V(Vds)
Operating Temperature (Max)
175 ℃
Power Dissipation (Max)
68W (Tc)

IRFZ34EPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFZ34EPBF Documents

Infineon
9 Pages / 1.8 MByte
Infineon
20 Pages / 2.6 MByte
Infineon
1 Pages / 0.14 MByte

IRFZ34 Documents

Vishay Siliconix
MOSFET N-CH 60V 30A TO-220AB
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
VISHAY
MOSFET N-CH 60V 30A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB
Infineon
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 60V...
Vishay Intertechnology
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Fairchild
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Microsemi
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
Motorola
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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