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IRFZ34PBF
$ 1.172
IRFZ34PBF Datasheet PDF (9 Pages)
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IRFZ34PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.05 Ω
Polarity
N-Channel
Power Dissipation
88 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
30.0 A
Rise Time
100 ns
Input Capacitance (Ciss)
1200pF @25V(Vds)
Input Power (Max)
88 W
Fall Time
52 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
88W (Tc)

IRFZ34PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 175℃
Minimum Packing Quantity
50

IRFZ34PBF Documents

VISHAY
9 Pages / 1.59 MByte
VISHAY
9 Pages / 1.59 MByte

IRFZ34 Documents

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Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 60V...
Vishay Intertechnology
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Fairchild
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Microsemi
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
Motorola
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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