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IRFZ48PBF
$ 1.24
IRFZ48PBF Datasheet PDF (9 Pages)
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IRFZ48PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220
Polarity
N-Channel
Power Dissipation
190 W
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
50.0 A
Rise Time
250 ns
Input Capacitance (Ciss)
2400pF @25V(Vds)
Fall Time
250 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
190 W

IRFZ48PBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
10.51 mm
Size-Width
4.65 mm
Size-Height
15.49 mm
Operating Temperature
-55℃ ~ 175℃

IRFZ48PBF Documents

VISHAY
9 Pages / 1.55 MByte
VISHAY
10 Pages / 0.17 MByte

IRFZ48 Documents

VISHAY
TO-220-3 N-CH 60V 50A 18mΩ
Vishay Semiconductor
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Philips
N-channel enhancement mode TrenchMOS transistor
NXP
TRANSISTOR 64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Vishay Siliconix
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Microsemi
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
TI
50A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Inchange Semiconductor
Transistor
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