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IRFZ48VPBF
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IRFZ48VPBF Datasheet PDF (11 Pages)
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IRFZ48VPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
72.0 A
Case/Package
TO-220-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
12 mΩ
Polarity
N-Channel
Power Dissipation
150 W
Part Family
IRFZ48V
Threshold Voltage
4 V
Input Capacitance
1985pF @25V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Continuous Drain Current (Ids)
72.0 A
Rise Time
200 ns
Input Capacitance (Ciss)
1985pF @25V(Vds)
Input Power (Max)
150 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRFZ48VPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.4 mm
Size-Height
16.51 mm
Operating Temperature
-55℃ ~ 175℃

IRFZ48VPBF Documents

International Rectifier
11 Pages / 0.41 MByte
International Rectifier
20 Pages / 2.6 MByte

IRFZ48 Documents

VISHAY
TO-220-3 N-CH 60V 50A 18mΩ
Vishay Semiconductor
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Philips
N-channel enhancement mode TrenchMOS transistor
NXP
TRANSISTOR 64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Vishay Siliconix
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Microsemi
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
TI
50A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Inchange Semiconductor
Transistor
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