IRG4BC40WPBF Datasheet PDF - Infineon

●The IRG4BC40WPBF is an Insulated Gate Bipolar Transistor designed expressly for switch-mode power supply and PFC (power factor correction) applications. The latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability. It features lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz (hard switched mode). Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300kHz).

● Industry-benchmark switching losses improve efficiency of all power supply topologies

● 50% Reduction of Eoff parameter

● Low IGBT conduction losses

● Particular benefit to single-ended converters and boost PFC topologies 150W and higher