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Part Datasheet Search > IGBTs > Infineon > IRG4PF50W Datasheet PDF
IRG4PF50W
$ 4.18
IRG4PF50W Datasheet PDF (11 Pages)
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IRG4PF50W Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
900 V
Current Rating
51.0 A
Case/Package
TO-247
Power Rating
200 W
Part Family
IRG4PF50W
Input Capacitance
3.30 nF
Rise Time
26.0 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200000 mW

IRG4PF50W Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube

IRG4PF50W Documents

Infineon
11 Pages / 0.25 MByte
Infineon
9 Pages / 0.14 MByte

IRG4PF50 Documents

Infineon
Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
INTERNATIONAL RECTIFIER IRG4PF50WDPBF IGBT Single Transistor, 51A, 2.25V, 200W, 900V, TO-247AC, 3Pins
International Rectifier
Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
International Rectifier
900V Warp 20-100kHz Copack IGBT in a TO-247AC package
International Rectifier
900V Warp 20-100kHz Discrete IGBT in a TO-247AC package
Infineon
Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
International Rectifier
Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
IRF
INSULATED GATE BIPOLAR TRANSISTOR
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