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Part Datasheet Search > IGBTs > Infineon > IRG4PF50WDPBF Datasheet PDF
IRG4PF50WDPBF
$ 3.955

IRG4PF50WDPBF Datasheet PDF - Infineon

Manufacturer:
Infineon
Category:
IGBTs
Case Package:
TO-247-3
Description:
Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AC Tube
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
IRG4PF50WDPBF Datasheet (11 Pages)
Package Outline Dimension on10 Page
IRG4PF50WDPBF User Reference Manual Guide (270 Pages)
IRG4PF50WDPBF Datasheet PDF (11 Pages)
View Datasheet
Click page to view the detail

IRG4PF50WDPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
200 W
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
200 W
Rise Time
52.0 ns
Breakdown Voltage (Collector to Emitter)
900 V
Reverse recovery time
90 ns
Input Power (Max)
200 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200000 mW
View Datasheet >

IRG4PF50WDPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
15.9 mm
Size-Width
5.3 mm
Size-Height
20.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

IRG4PF50WDPBF Documents

IRG4PF50WDPBF Datasheet
Infineon
11 Pages / 0.61 MByte
IRG4PF50WDPBF User Reference Manual Guide
Infineon
270 Pages / 11.59 MByte
IRG4PF50WDPBF Other Datasheet PDF
Infineon
73 Pages / 2.93 MByte
IRG4PF50WDPBF Drawing Diagrams
Infineon
2 Pages / 0.17 MByte
IRG4PF50WDPBF Other References
Infineon
1 Pages / 0.12 MByte

IRG4PF50 Documents

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Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AC Tube
IRG4PF50WDPBF Datasheet PDF
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Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AC Tube
IRG4PF50WDPBF Datasheet PDF
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IRG4PF50WPBF Datasheet PDF
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Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AC Tube
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Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
IRG4PF50WD-201P Datasheet PDF
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Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
IRG4PF50WPBF Datasheet PDF
IRF
INSULATED GATE BIPOLAR TRANSISTOR
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