IRG4PH50 Datasheet PDF - International Rectifier

●INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

●Features

●• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode

●• New IGBT design provides tighter parameter distribution and higher efficiency than previous generations

●• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

●• Industry standard TO-247AC package

●Benefits

●• Higher switching frequency capability than competitive IGBTs

●• Highest efficiency available

●• HEXFRED diodes optimized for performance with IGBT"s . Minimized recovery characteristics require

●less/no snubbing