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Part Datasheet Search > IGBTs > Infineon > IRG7PH35UD1-EP Datasheet PDF
IRG7PH35UD1-EP
$ 2.988
IRG7PH35UD1-EP Datasheet PDF (10 Pages)
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IRG7PH35UD1-EP Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
179 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
179 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
179 W

IRG7PH35UD1-EP Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
15.87 mm
Size-Width
5.31 mm
Size-Height
20.7 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRG7PH35UD1-EP Documents

Infineon
10 Pages / 0.3 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
6 Pages / 0.28 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
4 Pages / 0.1 MByte

IRG7PH35UD1 Documents

Infineon
IGBT Single Transistor, 50A, 1.9V, 179W, 1.2kV, TO-247AC, 3Pins
Infineon
Trans IGBT Chip N-CH 1200V 50A 179000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1200V 50A 179000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 50A 3Pin(3+Tab) TO-247AD Tube
Infineon
Trans IGBT Chip N-CH 1200V 50A 179000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 50A 3Pin(3+Tab) TO-247AD Tube
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