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Part Datasheet Search > IGBTs > Infineon > IRG7PH42UD1PBF Datasheet PDF
IRG7PH42UD1PBF
$ 1.966
IRG7PH42UD1PBF Datasheet PDF (10 Pages)
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IRG7PH42UD1PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
313 W
Number of Positions
3 Position
Power Dissipation
313 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
313 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
313000 mW

IRG7PH42UD1PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRG7PH42UD1PBF Documents

Infineon
10 Pages / 0.31 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
10 Pages / 0.44 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.23 MByte

IRG7PH42UD1 Documents

Infineon
Trans IGBT Chip N-CH 1200V 85A 313000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 1200V 85A 313000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 85A 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 1200V 85A 313000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 85A 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 85A 3Pin(3+Tab) TO-247AD Tube
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