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Part Datasheet Search > IGBTs > Infineon > IRG8P60N120KDPBF Datasheet PDF
IRG8P60N120KDPBF
$ 4.406
IRG8P60N120KDPBF Datasheet PDF (11 Pages)
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IRG8P60N120KDPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
420 W
Number of Positions
3 Position
Power Dissipation
420 W
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
210 ns
Input Power (Max)
420 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
420 W

IRG8P60N120KDPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.87 mm
Size-Width
5.31 mm
Size-Height
20.7 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRG8P60N120KDPBF Documents

Infineon
11 Pages / 0.67 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
6 Pages / 0.28 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.23 MByte

IRG8P60N120 Documents

Infineon
INFINEON IRG8P60N120KDPBF IGBT Single Transistor, N-CH, 100A, 1.7V, 420W, 1.2kV, TO-247AC, 3Pins
Infineon
Trans IGBT Chip N-CH 1200V 100A 420000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 100A 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 100A 3Pin(3+Tab) TO-247AC Tube
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